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首页> 外文期刊>Journal of Crystal Growth >Characterization of (In, Ga, Al) As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction
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Characterization of (In, Ga, Al) As/GaAs quantum-dot superlattice structures by high-resolution X-ray diffraction

机译:(In,Ga,Al)As / GaAs量子点超晶格结构的高分辨率X射线衍射表征

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摘要

High-resolution X-ray diffraction measurements have been performed on (In, Ga, Al) As/GaAs quantum-dot superlattice structures. We are able to observe up to 31 satellite peaks from 6 periods of a quantum-dot superlattice. Theoretical simulations of the rocking curves based on the Takagi-Taupin equations of dynamical diffraction theory Agree well with the experimental data It is found, however, that to obtain agreement between theory and experiment, The height of the quantum dot, including the wetting layer under the dot, must be used in the simulations; furthermore, The indium composition is apparently reduced from its nominal value.
机译:在(In,Ga,Al)As / GaAs量子点超晶格结构上执行了高分辨率X射线衍射测量。我们能够从一个量子点超晶格的6个周期中观察到多达31个卫星峰值。基于Takagi-Taupin动力学衍射理论方程的摇摆曲线的理论模拟与实验数据吻合良好,但是,为了在理论和实验之间取得一致,量子点的高度,包括在下面的润湿层点必须在模拟中使用;此外,铟组成明显从其标称值降低。

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