Changing the size and shape of Ge island by chemical etching

摘要

Self-assembled Ge islands were grown on Si (100) substrate by Si_2H_6-Ge molecular beam epitaxy. Subjected to a chemical etching, it is found that the size and shape (i.e. ratio of height to base width) of Ge islands change with etching time. In addition, the photoluminescence from the etched Ge islands shifted to the higher energy side compared to that of the as-deposited Ge islands.