Stress-induced dislocation generation in large FZ- and CZ-silicon single crystals-numerical model And qualitative considerations

摘要

When growing silicon crystals with higher diameter (presently up to 300 mm) the thermal stresses and possible dislocation generation in single crystals become a serious problem for both FZ- and CZ-method. A two-dimensional problem oriented code for the FEM-package ANSYS has been developed to calculate the temperature field in the growing crystal considering radiation exchange with reflectors and environment and thermal stresses.