InAs/GaInP self-assembled quantum dots: dots: molecular beam epitaxial growth and optical properties

摘要

We studied the growth of self-assembled InAs quantum dots (QDs) on GaInP using solid source molecular beam eqitaxy (MBE) with the aim of reducing the thermionic escape of bound carriers by burying the QDs in large bandgap materials such as GaInP. The density and size of QDs were measured by atomic force microscopy (AFM). This showed that InAs QDs were formed on GaInP when less than 0.15 monolayers (ML) of InAs was deposited, unlike the formation of InAs QDs on GaAs.