Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition

摘要

Zinc oxide (ZnO) thin films have been prepared on Si (001), Si (111), glass, and thermally grown SiO_2Si (001) substrates using a pulsed laser deposition. High-resolution transmission electron microscopy and selected-area electron diffraction showed that there are neither amorphous layer nor random oriented polycrystalline ZnO layer at the film/ substrates interfaces even if the films were formed at a relatively low substrate temperature of 400deg.C.