Impact of source material on silicon carbide vapor transport growth process

摘要

We have studied the impact of morphological changes of the source material during physical vapor transport growth of silicon carbide (SiC). Digital X-ray imaging (P.J.Wellmann et al., Mat. Res. Soc. Symp. Proc. 572 (1999) 259) was carried out to visualize the ongoing processes inside the Sic source material and numerical modeling was performed in order to study the impact on the crystal growth process.