Engineering analysis of microdefect formation during silicon crystal growth

摘要

The quality of single crystalline silicon wafers used as substrates for microelectronic devices is measured in terms of the type, size and number density of microdefects formed during crystal growth and subsequent processing. Native point defects-vacancies and self-interstitials-and impurities, such as oxygen and carbon, in the silicon crystal convect, diffuse, react and aggregate, driven by species super-saturation. To form defect structures at densities that are microscopically visible.