Elaboration and characterisation of Bi_2Se_3 thin films using ditertiarybutylselenide as a precursor by MOCVD system

摘要

The growth of Bi_2Se_3 thin films by metalorganic chemical vapour deposition (MOCVD) using trimethylbismuth and a novel Se-precursor: ditertiarybutylselenide (DTBSe) as bismuth and selenium sources, respectively, is investigated on pyrex substrates. These films always displayed n-type conduction for a VI/V ratio between 3 and 15. By X-ray diffraction and SEM observation, we noticed the polycrystalline structure of the layers of typical preferential c- orientation and confirmed the hexagonal structure. The microprobe data indicate that the best stoichiometry of Bi_2Se_3 was achieved.