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Effect of NH_3 on the growth characterization of TiN films at low temperature

机译:NH_3对低温下TiN薄膜生长特性的影响

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摘要

Titanium nitride (TiN) films were obtained by the atmospheric pressure chemical vapor deposition method of the TiCl_4-N_2-H_2 system with various flow rates of NH_3 at 600 deg. C. The growth characteristics, morphology and Microstructure of the TiN films deposited were analyzed by X-ray diffraction, scanning electron microscopy and Transmission electron microscopy. Without NH_3 addition, no TiN was deposited at 600 deg. C as shown in the X-ray Diffraction curve. However, by adding NH_3 into the TiCl_4-N_2-H_2 system, the crystalline TiN was obtained.
机译:通过TiCl_4-N_2-H_2系统的常压化学气相沉积方法,在NH_3的各种流速下于600度获得了氮化钛(TiN)膜。 C.通过X射线衍射,扫描电子显微镜和透射电子显微镜分析沉积的TiN膜的生长特性,形态和显微结构。在不添加NH_3的情况下,在600℃下没有沉积TiN。 C如X射线衍射曲线所示。然而,通过将NH_3添加到TiCl_4-N_2-H_2体系中,获得了结晶的TiN。

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