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Interband tunneling description of holes in Wurtzite GaN at high electric fields

机译:高电场下纤锌矿GaN中空穴的带间隧穿描述

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摘要

We have studied the time evolution of an ensemble of holes in Wurtzite GaN under the effect of a high electric field. The density matrix equation used as a foundation in the study includes band-to-band tunneling, but disregards collisions. In the description of the ensemble dynamics the full band structure is used. The average energy and group velocity for the ensemble is calculated, as well as velocity components corresponding to the non-diagonal elements of the velocity operator (interference). The calculations have been carried out for the electric field strengths 0.4 and 4 MV/cm. A comparison is presented of the results with and without inclusion of band tunneling in the ensemble dynamics. There is also a comparison of the velocity with and without the non-diagonal elements of the velocity operator terms. A conclusion is that Monte Carlo simulations considering band tunneling, but not interference, can give accurate results.
机译:我们研究了高电场作用下纤锌矿型GaN中空穴集合的时间演化。在研究中用作基础的密度矩阵方程包括带间隧道传输,但不考虑碰撞。在对整体动力学的描述中,使用了全频带结构。计算集合的平均能量和组速度,以及与速度算符的非对角元素相对应的速度分量(干扰)。已经针对0.4和4 MV / cm的电场强度进行了计算。比较了在整体动力学中是否包含频带隧穿的结果。在有速度运算符项的非对角元素和不具有非对角元素的情况下,还对速度进行了比较。结论是,考虑频带隧穿而不考虑干扰的蒙特卡洛模拟可以给出准确的结果。

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