Impact-ionization coefficient in silicon at high fields-a parametric approach

摘要

The impact-ionization coefficient α_n at high fields is derived in terms of the electric field ε and lattice temperature T_L, without introducing a priori relations among the parameters. An asymptotic analysis leads to simplifications that validate closed-form expressions of α_n. The role of the relaxation times in determining the slope of α_n (ε) is discussed, along with the meaning of the critical field.