Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress

摘要

We have developed a novel simulation approach to model electron mobility in the inversion layer which encompasses all the important effects of arbitrary wafer and applied stress orientations, such as carrier re-population, band warping, and scattering, going beyond the separate treatments of band warping and inversion anisotropy that have been demonstrated. Our model predicts an important consequence of electron band warping in retaining the increase of stress gain at high stress levels in the presence of shear stress at strong inversion.