...
机译:一种新的F(ast)-CMS NEGF算法,可有效地进行3D模拟,以有效地增强收缩隧道势垒硅纳米线MuGFET中的开关特性
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
Tyndall National Institute, University College Cork, Lee Makings, Prospect Row, Cork, Ireland;
nanowire; MOS devices; quantum effect semiconductor devices; steep subthreshold slope; NEGF simulations; tunnel-FET;
机译:使用有效的紧密绑定模式 - 空间NegF模型的III-V纳米线破裂差距异质结TFET的物理学和性能,使百万原子纳米线模拟
机译:使用有效的紧密绑定模式 - 空间NegF模型的III-V纳米线破裂差距异质结TFET的物理学和性能,使百万原子纳米线模拟
机译:精确定位的掺杂剂对最终硅纳米线晶体管性能的影响:完整的三维NEGF模拟研究
机译:一种新的F(AST)-CMS算法,用于高效三维NegF模拟的任意形状硅纳米线Mugfet
机译:应变对硅CMOS晶体管的影响:阈值电压,栅极隧穿电流和1 / f噪声特性。
机译:CMOS兼容工艺制造的硅纳米线中塞贝克系数的特性
机译:硅纳米线晶体管中精确放置的掺杂剂与界面粗糙度之间的相互作用:全三维NEGF模拟研究
机译:缺陷态空间位置对非晶硅和多晶硅薄膜晶体管开关特性的影响:amps 2-D的数值模拟