Numerical analysis of the resistance behavior of an electrostatically-induced graphene double junction

摘要

We present a numerical approach that we have developed in order to reproduce and explain the resistance behavior recently observed, as a function of the backgate voltage and of the position of a biased scanning probe, in a graphene flake in which a double p-n junction has been electrostatically induced. A simplified electrostatic model has been adopted to simulate the effect of gate voltages on the potential landscape, assuming for it a slow variation in space and using a simple capacitive model for the coupling between the electrodes and the graphene sheet. The transport analysis has then been performed with a solution of the Dirac equation in the reciprocal space coupled with a recursive scattering matrix approach. The efficiency of the adopted numerical procedure has allowed us to explore a wide range of possible potential landscapes and bias points, with the result of achieving a good agreement with available experimental data.