Behavior of the dielectric function of monolayer under Uniaxial Strain

摘要

In this paper, we demonstrate how the band gap of monolayer can be tuned by applying uniaxial strain. We also investigate the influence of uniaxial strain of more than 1 % on the behavior of the dielectric function. Our simulation results reveal that tension leads to a red shift in the spectrum of the dielectric function while the compression causes a blue shift. Furthermore, in both cases, the first energy peak changes nearly linearly. Excellent agreement exists between our numerical investigations and first principle calculations. These observations demonstrate new potentials for the monolayer in nanoelectronics and optoelectronics applications.