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On-printed circuit board emulator with controllability of pinched hysteresis loop for nanoscale thin-film memristor device

机译:具有可压缩滞后回线的可控制性的印刷电路板仿真器,用于纳米级薄膜忆阻器

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摘要

Since real memristor devices are still not commercially available to most researchers, modeling a memristor is an effective method to explore its properties. In this paper, a flux-controlled memristor emulator circuit that can correctly mimic the memristive behavior of a real nanoscale TiO2 thin-film memristor device is presented. The mathematical equations for the proposed emulator are explicitly derived, and the design parameters for the circuit in which the emulator works as a passive memristor with positive memductance are discussed. In addition, the proposed emulator can produce various v-i hysteretic behaviors by controlling the nonlinear polynomial cubic function between the flux and charge inside. The results from numerical simulations in PSpice and MATLAB, as well as the measured results from an implemented emulator circuit on a printed circuit board using off-the-shelf electronics components, demonstrate that a controllable emulator can actually be constructed. This study serves as a foundation for understanding and designing different emulators for nanoscale TiO2 thin-film memristors at the laboratory level.
机译:由于实际的忆阻器器件仍未为大多数研究人员所购得,因此对忆阻器建模是探索其特性的有效方法。本文提出了一种磁通量可控的忆阻器仿真电路,该电路可以正确模拟真实的纳米级TiO2薄膜忆阻器的忆阻性能。明确推导了所提出的仿真器的数学方程,并讨论了该仿真器用作具有正磁导率的无源忆阻器的电路的设计参数。另外,通过控制内部磁通和电荷之间的非线性多项式三次函数,所提出的仿真器可以产生各种v-i磁滞行为。 PSpice和MATLAB中数值模拟的结果以及使用现成的电子元件在印刷电路板上实现的仿真器电路的测量结果表明,实际上可以构建可控制的仿真器。该研究为在实验室一级了解和设计纳米级TiO2薄膜忆阻器的不同仿真器奠定了基础。

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