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首页> 外文期刊>Journal of Computational Electronics >Theoretical investigation of the structural, electronic and thermodynamic properties of cubic and orthorhombic XZrS_3 (X = Ba,Sr,Ca) compounds
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Theoretical investigation of the structural, electronic and thermodynamic properties of cubic and orthorhombic XZrS_3 (X = Ba,Sr,Ca) compounds

机译:立方和正畸XZRS_3(X = BA,SR,CA)化合物的结构,电子和热力学性能的理论研究

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摘要

The structural, electronic and thermodynamic properties of XZrS3 (X=Ba,Sr,Ca) compounds with orthorhombic Pbnm and cubic Pm-3m phases have been investigated and reported. The calculations have been performed using various density functionals within the generalized gradient approximation. The obtained lattice parameters for the Pnma phase reveal very good agreement with experiment. The computed electronic band structures show that in the cubic phase the material of interest is an indirect band-gap (R-?) semiconductor, whereas it is a direct band gap (?-?) in the orthorhombic phase. The semiconducting XZrS3 (X=Ba,Sr,Ca) compounds are found to satisfy the stability criteria against volume change. Based on the quasi-harmonic Debye model, the thermodynamic properties of the material in question have been predicted taking into account the lattice vibrations. The variation of the lattice constant, bulk modulus, heat capacity, Debye temperature and thermal expansion coefficient as a function of pressure in the range 0-30 GPa and temperatures of 0-1500K has been computed. Our findings show that external effects such as temperature and pressure are highly effective in tuning some of the macroscopic properties of the compounds under study.
机译:研究并报道了具有正交PBNM和立方PM-3M相的XZRS3(X = BA,SR,CA)化合物的结构,电子和热力学性质。已经在广义梯度近似内使用各种密度函数进行计算。 PNMA相获得的晶格参数显示出与实验非常好的协议。计算的电子频带结构表明,在立方相中,感兴趣的材料是间接带 - 间隙(R-α)半导体,而在正交相中是直接带隙(α-)。发现半导体XZRS3(X = BA,SR,CA)化合物以满足稳定标准的体积变化。基于准谐波模式模型,考虑到晶格振动,已经预测了有问题的材料的热力学性质。计算了晶格常数,散装模量,热容,作为0-30GPa范围和0-1500K温度的压力函数的函数的晶格常数,散装模量,热容量,德比温度和热膨胀系数。我们的研究结果表明,温度和压力等外部效果在调整研究下的化合物的一些宏观性质方面非常有效。

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