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首页> 外文期刊>Journal of Computational Electronics >Bayesian inversion for nanowire field-effect sensors
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Bayesian inversion for nanowire field-effect sensors

机译:纳米线场效应传感器的贝叶斯反演

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摘要

Nanowire field-effect sensors have recently been developed for label-free detection of biomolecules. In this work, we introduce a computational technique based on Bayesian estimation to determine the physical parameters of the sensor and, more importantly, the properties of the analyte molecules. To that end, we first propose a PDE-based model to simulate the device charge transport and electrochemical behavior. Then, the adaptive Metropolis algorithm with delayed rejection is applied to estimate the posterior distribution of unknown parameters, namely molecule charge density, molecule density, doping concentration, and electron and hole mobilities. We determine the device and molecules properties simultaneously, and we also calculate the molecule density as the only parameter after having determined the device parameters. This approach makes it possible not only to determine unknown parameters, but it also shows how well each parameter can be determined by yielding the probability density function (pdf).
机译:纳米线场效应传感器近来已被开发用于无标记地检测生物分子。在这项工作中,我们介绍一种基于贝叶斯估计的计算技术,以确定传感器的物理参数,更重要的是,确定分析物分子的特性。为此,我们首先提出一个基于PDE的模型来模拟器件的电荷传输和电化学行为。然后,采用具有延迟抑制的自适应Metropolis算法来估计未知参数的后验分布,这些未知参数即分子电荷密度,分子密度,掺杂浓度以及电子和空穴迁移率。我们同时确定了设备和分子的特性,并且在确定了设备参数之后,还计算了分子密度作为唯一的参数。这种方法不仅可以确定未知参数,而且还显示出通过产生概率密度函数(pdf)可以很好地确定每个参数。

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