Optimization of the geometry of a charge plasma double-gate junctionless transistor for improved RF stability

摘要

The radiofrequency (RF) stability of a charge plasma double-gate junctionless transistor (DG-CPJLT) is reported based on the stability factor (K) obtained from the Y-parameters of the device. The impact of variation of geometrical parameters, voltage biases, temperature, and interface traps on the stability of the DG-CPJLT is studied. Based on the results, an optimized DG-CPJLT device is designed and its RF figures of merit obtained. S-parameter values are also computed to study the high-frequency behavior of the device. Moreover, parameters for evaluation of the linearity, such as the third-order transconductance coefficient (g(m3)) and third-order voltage intercept point (VIP3), are also obtained for the optimized device. It is found that the DG-CPJLT shows significantly improved stability without affecting the RF figures of merit.