...
首页> 外文期刊>Journal of circuits, systems and computers >A Sub-1 V Temperature-Insensitive-PSR Bandgap Reference with Complementary Loop Locking
【24h】

A Sub-1 V Temperature-Insensitive-PSR Bandgap Reference with Complementary Loop Locking

机译:具有互补环路锁定功能的1V以下,温度不敏感的PSR带隙基准

获取原文
获取原文并翻译 | 示例

摘要

This paper presents a novel low-voltage bandgap reference with improved power supply rejection (PSR). The proposed circuit adopts a complementary loop locking approach for stabilizing the drain-source voltages of the current mirrors, which gives rise to a boost of the PSR performance by more than 30 dB over -20-110 degrees C and at 1-V supply. An analysis shows that the PSR of the proposed bandgap reference is typically characterized with its insensitivity to temperature variations. The circuit is designed with a commercial 0.18-mu m CMOS process. The experiment results of Monte Carlo simulation demonstrate that the average PSR with 1-V supply is -106 dB at DC and is -93.8 dB at 1 kHz (attained under a room temperature condition of 27 degrees C). And the temperature coefficient of the DC-based PSR is about 0 .83%/degrees C at 1-V supply, significantly decreased by three-six folds compared to other conventional designs. The quiescent current consumed is only about 13.5 mu A.
机译:本文提出了一种新型的低压带隙基准电压源,该基准电压源具有改进的电源抑制比(PSR)。拟议的电路采用互补环路锁定方法来稳定电流镜的漏极-源极电压,在-20-110摄氏度和1V电源下,其PSR性能可提高30 dB以上。分析表明,建议的带隙基准的PSR通常具有对温度变化不敏感的特征。该电路采用商用0.18微米CMOS工艺设计。蒙特卡洛模拟的实验结果表明,在1-V电源下,DC的平均PSR为-106 dB,在1 kHz下的平均PSR为-93.8 dB(在27℃的室温条件下获得)。在1V电源下,基于DC的PSR的温度系数约为0.83%/℃,与其他常规设计相比,温度系数显着降低了三倍。消耗的静态电流仅为13.5μA。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号