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Secondary Electron Emission from MgO Thin Films

机译:MgO薄膜的二次电子发射

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摘要

MgO thin films have been prepared and their secondary electron emission properties examined using both single pulse and dc measurement methods. High yields in the range of 15–20 are observed. The films are crystalline with an average crystal diameter of 100–500 A, comparable to the escape depth of the secondaries. The high yields are found to result primarily from the properties of bulk crystalline MgO rather than from thin film phenomena. Field enhanced emission is however observed and has been found to enhance the yield under some conditions by as much as 20%. The most probable energy of emission of the secondaries is about 1 ev. The yield of the films decreases upon exposure to water vapor and carbon dioxide. The films are found to be fairly stable under electron bombardment.
机译:已经制备了MgO薄膜,并使用单脉冲和直流测量方法对它们的二次电子发射性能进行了检查。观察到高产量在15-20之间。薄膜是晶体,平均晶体直径为100-500 A,与二次晶体的逸出深度相当。发现高产量主要是由于块状结晶MgO的特性,而不是薄膜现象。然而,观察到了场增强的发射,并且发现在某些条件下可将产率提高多达20%。次级气体最可能的发射能量约为1 ev。暴露于水蒸气和二氧化碳时,薄膜的产率降低。发现这些膜在电子轰击下相当稳定。

著录项

  • 来源
    《Journal of Applied Physics》 |1959年第3期|共4页
  • 作者

    Whetten N. Rey; Laponsky A. B.;

  • 作者单位

    General Electric Research Laboratory, Schenectady, New York;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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