Evidence for States (Bands) in the Forbidden Gap of Degenerate GaAs and InP—Secondary Tunnel Currents and Negative Resistances

Holonyak Nick

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Evidence for States (Bands) in the Forbidden Gap of Degenerate GaAs and InP—Secondary Tunnel Currents and Negative Resistances

机译：简并GaAs和InP的禁隙中状态（带）的证据-次级隧道电流和负电阻

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来源
《Journal of Applied Physics》 |1961年第1期|共2页
作者
Holonyak Nick;
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作者单位

General Electric Company, Syracuse, New York;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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2. An Analysis of Base Bias Current and Intrinsic Base Resistance Effects on InP-InGaAs, InGaP-GaAs, and SiGe Heterojunction Bipolar Transistors [J] . Yo-Sheng Lin, Chi-Chen Chen, Shey-Shi Lu Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第5A期

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4. InP/InGaAs resonant tunneling diode with six-route negative differential resistances [C] . Jung-Hui Tsai, Yu-Chi Kang, Wen-Shiung Lour . 2005

机译：具有六路负差分电阻的InP / InGaAs谐振隧道二极管
5. Tunneling calculations for gallium-arsenide - aluminum(x)gallium(1-x)arsenide graded band-gap sawtooth superlattices. [D] . Forrest, Kathrine Arlene. 1989

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Evidence for States (Bands) in the Forbidden Gap of Degenerate GaAs and InP—Secondary Tunnel Currents and Negative Resistances

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