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Temperature Dependency of Resistance of Thin Metal Films

机译:薄膜电阻的温度依赖性

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摘要

The temperature dependency of resistance of vacuum deposited gold and platinum films between room temperature and 400° and 600° C, respectively, has been studied. Particular emphasis has been placed on the transition between thick, continuous films with positive temperature coefficients and thin, granular, or lacunary films with negative temperature coefficients. In addition to the low positive coefficients usually observed in this transition region, a minimum in the resistance vs temperature curve is observed. It is shown that the observed behavior can be attributed to a linear combination of the resistance of the individual grains or aggregates and the resistance due to gaps or potential barriers between the grains. The behavior in the transition region depends critically on the size of both the barriers and grains in the film.
机译:研究了真空沉积的金膜和铂膜的电阻在室温与400°C和600°C之间的温度依赖性。已经特别强调了具有正温度系数的厚连续薄膜与具有负温度系数的薄颗粒或凹腔薄膜之间的过渡。除了通常在此过渡区域中观察到的低正系数外,还观察到了电阻与温度曲线的最小值。结果表明,观察到的行为可以归因于单个晶粒或聚集体的电阻与晶粒之间的间隙或势垒引起的电阻的线性组合。过渡区的行为主要取决于膜中势垒和晶粒的尺寸。

著录项

  • 来源
    《Journal of Applied Physics》 |1963年第6期|共5页
  • 作者

    Feldman Charles;

  • 作者单位

    Melpar, Inc., Falls Church, Virginia;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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