The Excitation Intensity Effect in the Band‐Edge Emission of GaAs and CdSe

Yee Jick H.; Condas George A.

首页> 外文期刊>Journal of Applied Physics >The Excitation Intensity Effect in the Band‐Edge Emission of GaAs and CdSe

【24h】

The Excitation Intensity Effect in the Band‐Edge Emission of GaAs and CdSe

机译：GaAs和CdSe的边沿发射中的激发强度效应

获取原文

获取原文并翻译 | 示例

获取外文期刊封面封底 >>

开具论文收录证明 >>

文献代查 >>

团队文献服务 >>

页面导航

著录项
相似文献
相关主题

著录项

来源
《Journal of Applied Physics 》 |1968年第1期| 共3页
作者
Yee Jick H.; Condas George A.;
展开▼
作者单位

Lawrence Radiation Laboratory, University of California, Livermore, California;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Disentangling the role of linear transition dipole in band-edge emission from single CdSe/ZnS quantum dots: Combined linear anisotropy and defocused emission pattern imaging [J] . Austin Cyphersmith Kevin Early Artem Maksov Jeremy Graham Yikuan Wang and Michael Barnes Applied Physics Letters . 2010 ,第12期

机译：解开线性跃迁偶极子在单个CdSe / ZnS量子点的带边缘发射中的作用：线性各向异性和散焦发射图案成像的组合
2. Disentangling the role of linear transition dipole in band-edge emission from single CdSe/ZnS quantum dots: Combined linear anisotropy and defocused emission pattern imaging [J] . Austin Cyphersmith, rnKevin Early, rnArtem Maksov, Applied Physics Letters . 2010 ,第12期

机译：解开线性跃迁偶极子在单个CdSe / ZnS量子点的带边缘发射中的作用：线性各向异性和散焦发射图案成像的组合
3. Below bandgap emission with intensity higher than band-to-band transition in GaAsN [J] . D. Sentosa, Tang Xiaohong, S. J. Chua, Physica Status Solidi. C, Conferences and critical reviews . 2008 ,第2期

机译：低于带隙发射的强度高于GaAsN中的带间跃迁
4. Valence band structure of GaAsN compounds and band-edge line-up in GaAs/GaAsN/InGaAs heterostructures [C] . Egorov, A.Yu., Odnobludov, . 2002

机译：GaAs / GaAsN / InGaAs异质结构中GaAsN化合物的价带结构和能带边排列
5. Heterojunctions of the GaAs/AlGaAs system: Crystal growth by metalorganic chemical vapor deposition and characterization using capacitance-voltage techniques for the determination of the conduction band discontinuity [D] . Kawase, Yoshihiro 1987

机译：GaAs / AlGaAs系统的异质结：通过金属有机化学气相沉积进行的晶体生长以及使用电容电压技术进行表征，以确定导带不连续性
6. Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells [O] . Jinling Yu, Shuying Cheng, Yunfeng Lai, 2014

机译：InGaAs / GaAs / AlGaAs阶跃量子阱中带间激发的Rashba型和Dresselhaus型圆形光电流效应引起的自旋光电流谱
7. Enhancement of Spontaneous Emission from CdSe/CdS/ZnS Quantum Dots at the Edge of the Photonic Band Gap in a Porous Silicon Bragg Mirror [O] . Dovzhenko Dmitriy, Osipov Evgeniy, Martynov Igor, 2015

机译：多孔硅布拉格反射镜中光子带隙边缘处CdSe / CdS / ZnS量子点的自发发射的增强

The Excitation Intensity Effect in the Band‐Edge Emission of GaAs and CdSe

著录项

相似文献

相关主题

期刊订阅