Deformation Potential and Piezoelectric Ultrasonic Phonon‐Charge Carrier Coupling in Indium Antimonide

摘要

The interaction of ultrasonic phonons with charge carriers in nearly intrinsic InSb via deformation potential and piezoelectric coupling mechanisms has been investigated at 296 K in magnetic fields of 0 to 11 kOe and over a frequency range of 10 to 200 MHz. The single crystal InSb was p type with an average acceptor concentration of (1.45±0.05)×1016 cm-3. The experiment permitted an ultrasonic determination of the electron and hole mobilities. The values obtained were μn0 = (58 000±4000) cm2 V-1 sec-1 and μp0 = (720±80) cm2 V-1 sec-1. Values of the deformation potential and piezoelectric coupling constants obtained were | Cn+Cp | = (5.8±0.4) eV and e14 = | 0.076±0.010 | C/m2.