Nonlinear Faraday Effect in Nonparabolic Semiconductors

摘要

The distribution function of carriers in a nonparabolic semiconductor subjected to a strong electromagnetic (em) field and a steady magnetic field has been derived, considering polar optical mode and ionized impurity as the sole scattering mechanism of the carrier at electron temperature greater than Debye's temperature. Explicit expressions for the current densities, corresponding to both the modes of propagation, are derived for a moderately strong em wave and then substituted in the general wave equation; the resulting nonlinear second‐order differential equations are solved to obtain the expressions for Faraday rotation and ellipticity. It is seen that although the nonparabolicity restricts the heating of carriers, effect of nonlinearity is much more significant at lower frequencies. The present investigation can directly be used to study the effect of em heating on galvanomagnetic phenomena in nonparabolic semiconductors.