Hot‐Electron Distribution in n‐GaAs Derived from Photoluminescence Measurements with Applied Electric Field

摘要

Photoluminescence measurements have been made on thin, epitaxial layers of n‐GaAs to which an electric field is applied. Field‐dependent spectra are obtained corresponding to band‐to‐band recombination at 77 and 200°K, and from these the changes in electron distribution function are derived, allowance being made for the distributions of light and heavy holes. A fairly good agreement with theory is obtained, although variations between samples are too great to give clear support to the detailed model of Rees as opposed to the more phenomenologically drifted Maxwellian. The field suppression of the exciton peak is marked and is not adequately explained by present theory.