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Measurement of photoluminescence spectral linewidth of a GaAs quantum well in perpendicular electric fields: Evidence of a crossover from trions to an electron-hole gas

机译:GaAs量子阱在垂直电场中的光致发光光谱线宽的测量:从tri子到电子空穴气体交叉的证据

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摘要

By measuring the photoluminescence linewidth of a GaAs quantum well under perpendicular electric fields, we have traced the variation of the effective radius a* of a charged exciton (trion) as a function of electron density. The a* increases sharply above a critical density ns=2×1014 m−2, which is consistent with the decrease of the screening length predicted by nonlinear-screening theory. Our analysis shows that the crossover from trions to the two-dimensional electron gas plus hole is generated by Coulomb screening in the high-electron-density regime, eliminating the possible mechanism by the trion localization effect due to the single-electron localization.
机译:通过测量垂直电场下GaAs量子阱的光致发光线宽,我们追踪了带电激子(trion)的有效半径a *随电子密度的变化。在临界密度ns = 2×1014 m-2以上,a *急剧增加,这与非线性筛选理论预测的筛选长度减少是一致的。我们的分析表明,在高电子密度条件下,通过库仑筛选产生了从tri声子到二维电子气加空穴的穿越,从而消除了由于单电子局域化引起的tri声子局域化效应的可能机理。

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