Temperature Dependence of Hole Velocity in p‐GaAs

摘要

The temperature dependence of the saturation drift velocity of holes in p‐GaAs has been experimentally determined. The material used was grown epitaxially and had a low field mobility μ≈400 cm2/V sec and carrier concentration p0≈1×1016/cm3, both at T=300°K. The saturation velocity was 1.0×107 cm/sec at T=300°K, and decreased to 7×106 cm/sec at T=469°K. The temperature dependence of the low‐field mobility was also measured and was found to be in good agreement with the recent theory of Wiley and DiDomenico.