The diffusion of germanium in silicon

摘要

The diffusion of germanium in single‐crystal silicon has been measured using the radioactive tracer 71Ge and a thin sectioning technique. The activation energy of 4.7 eV determined from the data is analyzed by considering the expected contribution due to the wrong‐sized impurity ions. It is concluded that the high activation energy observed is expected from analogy to silicon self‐diffusion.