Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy

摘要

The electron diffusion length in p‐type GaAs:Ge grown by liquid‐phase epitaxy has been measured as a function of hole concentration. The direct measurements were made by two different techniques —a laser beam scan on beveled samples and an α particle scan on cleaved samples. These measurements are in good agreement and show that the diffusion length increases from ∼6 μm at p=1×1019 cm-3 to ∼20 μm at p=7×1016 cm-3. In addition, the diffusion length was estimated from electroluminescent decay times of p‐n junctions and the values obtained were in reasonable agreement with those directly measured for the same materials.