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Theory of potential‐well formation in an electrostatic confinement device

机译:静电限制装置中的势阱形成理论

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A theoretical model is developed to describe the behavior of an ion‐injection electrostatic confinement device. It is assumed that there is a shallow potential well in the center. Distribution functions, which are consistent with atomic processes occurring and with mechanisms leading to particle angular momentum, are obtained for ions and electrons. Using these distribution functions, Poisson's equation is solved to obtain potential and density profiles. By varying the experimental parameters, the conditions needed to go from a shallow potential well to a deep potential well are studied. The most important problems are found to be nonspherical focusing through grid construction asymmetry, and neutralization by electrons. Deeper wells are produced by increasing ion perveance, improving spherical symmetry, and reducing pressure.
机译:建立了一个理论模型来描述离子注入静电约束装置的行为。假定中心有一个浅势阱。对于离子和电子,获得了与发生的原子过程和导致粒子角动量的机理一致的分布函数。使用这些分布函数,可以求解泊松方程以获得势和密度曲线。通过改变实验参数,研究了从浅势阱到深势阱所需的条件。发现最重要的问题是通过网格结构的不对称性引起的非球面聚焦,以及被电子中和。通过增加离子渗透率,改善球对称性和降低压力来生产更深的井。

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    《Journal of Applied Physics》 |1974年第6期|P.2502-2511|共10页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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