Experiments were performed on the modulation of CO2 laser radiation (10.6 μ) at the piezoelectric resonance frequencies of a GaAs sample. The GaAs crystal length was 5.09 cm in the [11¯0] direction with a cross section of 0.291 cm [110] × 0.278 cm [001]. Experimentally, one shear and two thickness vibration modes were observed. The voltages to yield half-wave retardation by means of the piezoelectro-optic effect were found to be 4.15 V at the shear resonance frequency (736.900 kHz) and 15.4 and 51.0 V at the first (675.800 kHz) and second (1019.130 kHz) thickness resonance frequencies, respectively. The bandwidths were in the range 30–100 Hz. When the electro-optic modulation scheme is used instead of the resonant piezoelectro-optic modulation scheme, 5.2 kV are required to obtain half-wave retardation with the same sample. The shape of the sample precluded analytically solvable models for the observed phenomena. However, approximate models yield reasonable order-of-magnitude agreement with the observed values.
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机译：在GaAs样品的压电共振频率下对CO2激光辐射（10.6μ）的调制进行了实验。 GaAs晶体在[11’0]方向的长度为5.09 cm，截面为0.291 cm [110]×0.278 cm [001]。在实验中，观察到一种剪切和两种厚度的振动模式。发现通过压电效应产生半波延迟的电压在剪切共振频率（736.900 kHz）下为4.15 V，在第一厚度（675.800 kHz）和第二层（1019.130 kHz）为15.4和51.0V。共振频率。带宽范围为30–100 Hz。当使用电光调制方案代替谐振压电电光调制方案时，需要5.2 kV才能获得同一样品的半波延迟。样品的形状排除了所观察到的现象的解析可解模型。但是，近似模型会产生与观测值合理的量级一致性。
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