Effect of saturation current on noise in IMPATT diodes under large‐signal conditions

摘要

A large‐signal noise theory for IMPATT diodes, not neglecting the effect of the parasitic injected current (saturation and/or tunnel current) is presented. Under large‐signal conditions, it is found that the noise increase is much less for high effective saturation current than for a low one. The theoretical conclusions are experimentally evidenced. The true physical mechanism behind the effective saturation is briefly explained.