Normal modes of semiconductor p‐n–junction devices for material‐parameter determination

摘要

An expression for the dominant normal model (natural frequency) of a p‐n–junction diode is derived. The expression includes the effects of minority charge in the quasineutral emitter as well as the base region, and is applicable for any concentration profiles of impurity and recombination centers, regardless of high recombination rates or band‐edge distortion in the emitter. Its use enables the experimental determination of material parameters pertaining to the relative roles of the emitter and the base in governing the behavior of various junction devices, including diodes, transistors, and solar cells.