New etch pits on GaAs revealed by etching after anodic oxidization

摘要

New etch pits, characteristic of crystal orientation, have been observed after etching anodically oxidized GaAs wafers. The etch pits do not always correspond to dislocations originally contained in the wafer and are most likely to indicate structural defects in the transition layer between oxide and GaAs, introduced by anodic oxidization.