Liquid‐phase epitaxial growth of smooth and thin layers of GaAs on nominally oriented substrates

摘要

A method of liquid‐phase epitaxial growth of smooth thin layers on nominally oriented GaAs substrates is described. It utilizes a rapid etch‐back of the substrate by an undersaturated solution, followed by growth from the same solution as it cools. The technique overcomes the requirement of an exactly oriented substrate for growth of smooth layers, and simultaneously produces a clean interface between the epi‐layer and the substrate.