The effect of neutron irradiation on the lattice parameter and anomalous x‐ray transmission of silicon

摘要

This paper reports the effects of fast‐neutron irradiation on the lattice parameter and anomalous x‐ray transmission of silicon. A monochromator first suggested by Hart was used to make precision measurements of the lattice parameter and measurements of integrated intensities simultaneously on the same sample. Isochronal annealing results of both quantitites are related to earlier studies and to each other. Two dominant annealing regions centered at about 180 and 550 °C were observed, although the precise location of these regions appeared to be dependent upon neutron dose and the physical quantity (lattice parameter or anomalously diffracted intensities) being measured. Some additional evidence was found for reverse annealing behavior at temperatures greater than 650 °C; this behavior was attributed to the formation of defect clusters.