Furnace annealing behavior of phosphorus implanted, laser annealed silicon

摘要

The furnace annealing characteristics of supersaturated solutions produced by P+ implantation (50 keV, 8×1015 cm-2) and Q‐switched pulse by ruby laser annealing (0.3–1.5 J/cm2) are investigated. Observed phenomena are classified into two regions. In the region of laser energy ?0.8 J/cm2, the concentrations of supersaturated solutions decrease monotonically to, and remain at thermal equilibrium values during furnace annealing. In the region of laser energy ≪0.8 J/CM2, the concentrations decrease at first to below the thermal equilibrium values with furnace annealing. However, with continued furnace annealing, the solution concentrations increase and approach the equilibrium value. These results are discussed in relation to the crystal quality after laser annealing and formation of dislocation loops durin subsequent furnace annealing.