Attenuated total reflectance study of silicon‐rich silicon dioxide films

摘要

The infrared absorption of Si‐rich SiO2 films has been measured using the attenuated total reflection technique. Absorption lines attributed to SiOH, H2O, and SiH groups have been observed in the as‐deposited films. The concentrations of the SiOH and H2O impurities were found to be in the low 1021 cm-3 range, and the concentration of the SiH impurity was found to be 1018 cm-3. Following a 1000 C anneal 1019 cm-3 and 1016 cm-3 ranges, respectively.