Behavior of diffused junction silicon solar cells in the temperature range 77–500 K

摘要

The absorption coefficient α for Si, using an indirect transition theory, has been calculated in the temperature range 77–520 K as a function of wavelength. The computed values of α have been used to calculate the performance parameters, such as Jsc,Voc, FF, and η as a function of temperature for diffused junction n+p Si solar cells. The calculated results have been experimentally verified by measuring the current‐voltage characteristics at 1 sun of two n+p solar cells having base resistivity 1 and 10 Ω cm, respectively.