Voltage dependence of the dark and photocurrents in semiconductor‐electrolyte junctions

摘要

Expressions for the dark and photocurrent of a semiconductor‐electrolyte junction are derived. Charge transfer kinetics, surface recombination, recombination in the space‐charge region, and series resistance are discussed in our model. A measurement of the I‐V characteristics, both in the dark and under illumination, aids in the estimation of the parameters of the device. The model agrees with the general observed quantum efficiency variation with voltage.