Effects of humidity on stress in thin silicon dioxide films

摘要

The stresses of thermally grown as well as chemically vapor deposited (CVD) silicon dioxide were measured by the cantilever beam technique using x‐ray diffraction. Thermally grown oxide shows reversible stress changes upon heating or cooling of the films. The linear thermal expansion of such films is similar to that of bulk vitreous silica, 5×10-7 °C-1, the biaxial elastic modulus was found to be 6.3×1011 dyn/cm2. CVD oxides show extensive hysteresis in the stress‐temperature curves when tested in ambient air. From stress measurements of such films, deposited on Si and GaAs, it was concluded that their average linear thermal expansion coefficient in the temperature range of -170–115 °C is 4×10-6 °C-1, much higher than that of thermally grown oxide, while their biaxial elastic modulus is only 4.6–5.1×1011 dyn/cm2. The stress in such films was found to increase when the films were exposed to a dry ambient or vacuum. The time constant for this change was found to be several minutes at room temperature.