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Auger spectra induced by Ne+ and Ar+ impact on Mg, Al, and Si

机译:Ne +和Ar +诱导的俄歇谱对Mg,Al和Si的影响

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Impact of Ne+ and Ar+ at energies of 20–200 keV on targets of Mg, Al, and Si gives rise to an electron spectrum that has sharp atomiclike features superimposed on a continuous background. The continuum is similar to the spectrum observed during electron impact and is generally ascribed to decay of L‐shell vacancies in the matrix. We show, however, that this is not completely correct, that the apparent continuum induced by ion impact extends to higher energies than for electron impact and that this is due to the presence of some hitherto unidentified atomiclike lines. We identify the atomiclike transitions as due to particles sputtered with L‐shell vacancies. A complete modelling of the spectra is performed which accounts quantitatively for all Auger peaks. We conclude that the major features are due to sputtered neutral atoms with a single inner shell vacancy. The electron configurations and energies are Mg0 2p53s23p (50.6 eV), Al0 2p53s23p2 (73.8 eV), and Si0 2p53s23p3 (101.1 eV). These are states where one electron has been removed from the L shell but an electron added to the 3p shell to maintain neutrality. Other weaker lines are identified as due to sputtered Mg+, Al+, and Si+ with single L‐shell vacancies. For the case of silicon we identify an additional feature that we tentatively ascribe to sputtered atoms decaying while still within the field of the surface. A detailed modelling of the spectrum with all these components provides a complete explanation of all features of the spectrum lending confidence to the line identifications. Line intensities provide relative transition probabilities for competing decay processes.
机译:Ne +和Ar +在20–200 keV的能量对Mg,Al和Si靶的影响产生了一个电子光谱,该电子光谱具有叠加在连续背景上的尖锐原子状特征。该连续体类似于在电子撞击期间观察到的光谱,通常归因于基质中L壳空位的衰减。但是,我们证明这不是完全正确的,与电子撞击相比,由离子撞击引起的表观连续性能扩展到更高的能量,这是由于存在一些迄今尚未识别的原子状线。我们确定原子状跃迁是由于粒子被L壳空位溅射所致。对光谱进行完整建模,以定量说明所有俄歇峰。我们得出结论,主要特征是由于溅射的中性原子具有单个内壳空位。电子构型和能量为MgO 2p53s23p(50.6 eV),Al0 2p53s23p2(73.8 eV)和Si0 2p53s23p3(101.1 eV)。在这些状态下,一个电子已从L壳中移出,但一个电子被添加到3p壳中以保持中立。其他较弱的线被认为是由于具有单个L壳空位的Mg +,Al +和Si +溅射所致。对于硅,我们确定了一个附加特征,我们将其归因于溅射的原子仍在表面场内而衰减。使用所有这些组件对频谱进行详细的建模,可以对频谱的所有特征提供完整的解释,从而有助于线路识别。线强度为竞争衰减过程提供了相对过渡概率。

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    《Journal of Applied Physics 》 |1984年第5期| P.1505-1513| 共9页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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