Carrier diffusion and recombination influencing gain and current profiles in planar injection lasers

摘要

Carrier diffusion and spontaneous recombination processes are analyzed within the framework of a consistent treatment for lateral current spreading in injection lasers. The formalism allows analysis of the above‐threshold behavior of the device and results of relevance to mode stability properties are obtained. The extension of the model to the analysis of three‐dimensional effects following from longitudinal nonuniformities in the laser is briefly considered.