Role of stress on the parabolic kinetic constant for dry silicon oxidation

摘要

This paper is concerned with the temperature dependence of the parabolic kinetic constant Kp for dry oxidation of silicon. Based on the stress stated model of oxidation, an explanation of the change with temperature of the activation energy of Kp, as well as of the diffusivity decaying near the Si‐SiO2 interface, is presented by considering the temperature‐dependent free energy change due to stress relaxation during growth. The results are favorably compared to dry oxidation data. Moreover, the maximum stress at the Si‐SiO2 interface found on the order of 4×1010 dyn/cm2 is consistent with experimental data of stress measurements.