...
首页> 外文期刊>Journal of Applied Physics >Surface contribution to the ferrimagnetic resonance linewidth of single‐crystal YIG versus frequency and temperature
【24h】

Surface contribution to the ferrimagnetic resonance linewidth of single‐crystal YIG versus frequency and temperature

机译:表面对单晶YIG铁磁谐振线宽的贡献与频率和温度的关系

获取原文

摘要

The knowledge of microwave intrinsic losses of ferrimagnetic single crystals is often obscured by the scattering process induced by surface defects. The existing data and the corresponding model dealing with this effect are far from sufficient to understand the phenomenon; in the millimetric range, the importance of the surface imperfection linewidth ΔHs is a major difficulty for obtaining the single‐crystal intrinsic linewidth ΔHi from ΔH measurements. We have investigated on a pure YIG single crystal the full dependence of the surface effect as a function of the surface pit size, the frequency, and the temperature. An automatic linewidth spectrometer is used, which allows measurements in the frequency range 1–18 GHz and the temperature range -100 to 270 °C. The dc magnetic field is aligned with the 111] easy axis of the crystal. Three main conclusions are obtained: (1) For a constant sample diameter, the variation of the surface contribution ΔHs is found to be a nonlinear function of the pit size. (2) Whatever the surface roughness, ΔHs is a minimum when passing the top of the spin‐wave manifold. This is similar to the behavior of the volume porosity line‐broadening contribution observed in polycrystalline materials. (3) For a constant reduced internal field Ω (Ω=Hi/4πMs), the temperature dependence of ΔHs follows the temperature dependence of the saturation magnetization.
机译:亚铁磁性单晶的微波固有损耗常被表面缺陷引起的散射过程所掩盖。现有的数据和处理该效应的相应模型还不足以了解这种现象。在毫米范围内,表面缺陷线宽ΔHs的重要性是从ΔH测量中获得单晶固有线宽ΔHi的主要困难。我们已经在纯YIG单晶上研究了表面效应与表面凹坑尺寸,频率和温度的函数的完全相关性。使用自动线宽光谱仪,可以在1-18 GHz频率范围和-100至270°C的温度范围内进行测量。直流磁场与晶体的111]易轴对齐。得到三个主要结论:(1)对于恒定的样品直径,发现表面贡献ΔHs的变化是凹坑尺寸的非线性函数。 (2)无论表面粗糙度如何,通过自旋波歧管顶部时,ΔHs均为最小值。这类似于在多晶材料中观察到的体积孔隙率线扩大作用。 (3)对于恒定减小的内部磁场Ω(Ω= Hi /4πMs),ΔHs的温度依赖性遵循饱和磁化强度的温度依赖性。

著录项

  • 来源
    《Journal of Applied Physics 》 |1985年第8期| P.3696-3698| 共3页
  • 作者

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号