High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction

摘要

We have obtained two‐dimensional hole gas with low temperature mobility as high as 3.8×105 cm2 V-1 s-1 at a density of 1×1011 cm-2. The sample was grown on (311)A orientation. We give arguments to show that (100) orientation is not the optimum orientation for the growth of high purity materials.