Exact solution of three‐dimensional transport problems using one‐dimensional models

摘要

Several parameters of certain three‐dimensional semiconductor devices including diodes, transistors, and solar cells can be determined without solving the actual boundary‐value problem. The recombination current, transit time, and open‐circuit voltage of planar diodes are emphasized here. The resulting analytical expressions enable determination of the surface recombination velocity of shallow planar diodes. The method involves introducing corresponding one‐dimensional models having the same values of these parameters.