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首页> 外文期刊>Journal of Applied Physics >Size saturation in low energy ion beam synthesized nanoparticles in silica glass: 50 keV Ag- ions implantation, a case study
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Size saturation in low energy ion beam synthesized nanoparticles in silica glass: 50 keV Ag- ions implantation, a case study

机译:石英玻璃中低能离子束合成纳米粒子的尺寸饱和度:50 keV Ag-离子注入,案例研究

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摘要

Fluence-dependent formation of Ag nanoparticles (NPs) in silica glass by 50 keV Ag- ions implantation has been studied. Samples implanted with fluences of 2×1016 ions cm-2 and above are found to show an absorption band at around 410 nm, corresponding to the surface plasmon resonance (SPR) of the Ag NPs in silica glass. An increase in SPR peak intensity with increase in fluence has been observed up to a fluence of 7×1016 ions cm-2 (F7), after which the absorption intensity shows a saturation. Simulations of the optical absorption spectra also indicated an increase in the absorption intensity and hence the size of the NPs with increase in fluence up to F7, beyond which NP size is seen to saturate. The saturation of fluence and the SPR intensity (or NP size) have been explained as coming due to a break up of larger Ag NPs formed near the surface by displacement spikes induced by subsequently incident Ag ions against their regrowth from the movement of Ag atoms toward the surface and their sputtering loss. Further, we have compared our observations with the earlier data on saturation of fluence and size of NPs in cases of Au and Zn, and concluded that the saturation of both fluence and NP size are general phenomena for low energy high fluence metal ion implantation.
机译:已经研究了通过50 keV Ag离子注入在石英玻璃中与注量有关的银纳米颗粒(NPs)的形成。发现注入注量为2×1016离子cm-2及以上的样品在410 nm处显示吸收带,与石英玻璃中Ag NP的表面等离振子共振(SPR)相对应。观察到SPR峰强度随注量的增加而增加,直到注量为7×1016离子cm-2(F7),此后吸收强度显示饱和。光学吸收光谱的模拟还表明吸收强度的增加,因此NPs的尺寸随着通量的增加而增加,直至F7,超过NP7的尺寸被认为是饱和的。通量的饱和度和SPR强度(或NP大小)已被解释为由于较大的Ag NP在表面附近形成,这是由于随后入射的Ag离子抵抗其从Ag原子向其再生的再生长所引起的位移尖峰而破坏的。表面及其溅射损失。此外,我们将我们的观察结果与较早的关于在金和锌情况下的注量和NPs的饱和度的数据进行了比较,并得出结论,注量和NP大小的饱和都是低能量高注量金属离子注入的普遍现象。

著录项

  • 来源
    《Journal of Applied Physics》 |2010年第5期|P.054301-054301-6|共6页
  • 作者

    Kuiri P. K.;

  • 作者单位

    Department of Physics, Achhruram Memorial College, P.O. Jhalda, Purulia 723202, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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